SI1021R-T1-GE3
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Краткое описание:
P-CH JFET -60V, 190mA, 4R, SOT-416, Surface Mount
Дополнительная информация
P-channel TrenchFET® Junction Field-Effect Transistor (JFET) for surface mount applications. Features a -60V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 190mA. Offers a low Drain-source On Resistance (Rds On) of 4 Ohms maximum. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Packaged in a compact SOT-416 (SC-75A) case, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.76mm |
| Height | 0.7mm |
| Length | 1.58mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| Package/Case | SOT-416 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 23pF |
| Power Dissipation | 250mW |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 190mA |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 4R |
| Drain to Source Breakdown Voltage | -60V |
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