SI1022R-T1-E3
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Краткое описание:
N-CH MOSFET 60V 0.33A SOT-416 1.25R
Дополнительная информация
N-channel MOSFET with 60V drain-source breakdown voltage and 330mA continuous drain current. Features a low 1.25 Ohm drain-source on-resistance at 2.5V nominal gate-source voltage. Packaged in a compact SOT-416 surface-mount case, this component offers 250mW power dissipation and operates across a -55°C to 150°C temperature range. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.76mm |
| Height | 0.7mm |
| Length | 1.58mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.25R |
| Nominal Vgs | 2.5V |
| Package/Case | SOT-416 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 30pF |
| Power Dissipation | 250mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.25R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 330mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3R |
| Drain to Source Breakdown Voltage | 60V |
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