SI1022R-T1-GE3

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SI1022R-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 60V 0.33A 1.25R SC-75A Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel TrenchFET® MOSFET with 60V drain-source voltage and 330mA continuous drain current. Features low 1.25Ω maximum drain-source on-resistance and 2.5V threshold voltage. Surface mountable in a 3-pin SC-75A package, this component operates from -55°C to 150°C with 250mW maximum power dissipation. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 0.76mm
Height 0.7mm
Length 1.58mm
Series TrenchFET®
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.25R
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 30pF
Threshold Voltage 2.5V
Number of Channels 1
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 250mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.25R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 330mA
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 3R

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