SI1023X-T1-GE3

Не рекомендуется для новых проектов
SI1023X-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH JFET, 20V, 370mA, 1.2R, SOT-563-6, 2 Channel
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

P-channel, dual-channel JFET for general-purpose small signal applications. Features a continuous drain current of 370mA and a drain-source voltage of -20V. Offers a maximum drain-source on-resistance of 1.2 Ohms. Housed in a compact SOT-563-6 (SC-89) surface-mount package with 6 pins. Operates across a wide temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.2mm
Height 0.6mm
Length 1.7mm
Series TrenchFET®
Weight 0.000289oz
Polarity P-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.2R
Package/Case SOT-563-6
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage -450mV
Number of Channels 2
Radiation Hardening No
Reach SVHC Compliant Unknown
Max Power Dissipation 250mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7R
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) 370mA
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 1.2R

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