SI1024X-T1-GE3
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Краткое описание:
N-CH JFET 20V 485mA 700mR SOT-563
Дополнительная информация
N-Channel TrenchFET® MOSFET, 20V Vdss, 485mA continuous drain current. Features 700mΩ max drain-source on-resistance and 450mV threshold voltage. Operates with a 6V gate-source voltage and offers 10ns turn-on and 36ns turn-off delay times. Packaged in a compact 1.7mm x 1.2mm x 0.6mm SOT-563-6 surface-mount case, this RoHS compliant component has a max power dissipation of 250mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.000289oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SOT-563-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 450mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 485mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 700mR |
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