SI1026X-T1-GE3
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Краткое описание:
2 N-Ch JFET 60V 305mA 1.4R SOT-563F SM T/R
Дополнительная информация
N-Channel Junction Field-Effect Transistor (JFET) with 60V Drain to Source Breakdown Voltage and 305mA Continuous Drain Current. Features a maximum Drain-source On Resistance of 1.4 Ohms and a Gate to Source Voltage of 20V. This surface mount component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 250mW. Supplied in a 6-pin SOT-563F package on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Weight | 0.001129oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | SC |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 30pF |
| Power Dissipation | 250mW |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 305mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3R |
| Drain to Source Breakdown Voltage | 60V |
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