SI1028X-T1-GE3
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Краткое описание:
VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
Дополнительная информация
VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Packaging | Tape and Reel |
| Rds On Max | 650mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Input Capacitance | 16pF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 220mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 480mA |
| Drain to Source Voltage (Vdss) | 30V |
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