SI1029X-T1-GE3
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Краткое описание:
N/P-CH JFET 60V 305mA 1.4R SOT-563F SM
Дополнительная информация
Dual N-channel and P-channel Junction Field-Effect Transistor (JFET) for surface mount applications. Features 60V drain-source voltage (Vdss) and a maximum continuous drain current of 305mA for the N-channel and 190mA for the P-channel. Offers a low drain-source on-resistance (Rds On) of 1.4 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Packaged in a compact 1.7mm x 1.2mm x 0.6mm SOT-563F case, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 30pF |
| Power Dissipation | 280mW |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 305mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4R |
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