SI1032R-T1-GE3

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SI1032R-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 20V 140mA 5R SC-75A Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel JFET with 20V drain-source breakdown voltage and 140mA continuous drain current. Features 5 Ohm maximum drain-source on-resistance and 900mV threshold voltage. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount case, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 0.76mm
Height 0.7mm
Length 1.58mm
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5R
Package/Case SC
Polarization N
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 250mW
Threshold Voltage 900mV
Number of Channels 1
Turn-On Delay Time 50ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant Unknown
Max Power Dissipation 250mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 5R
Gate to Source Voltage (Vgs) 6V
Continuous Drain Current (ID) 140mA
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 5R
Drain to Source Breakdown Voltage 20V

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