SI1034X-T1-GE3
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Краткое описание:
2-Ch N-Ch JFET, 20V, 180mA, 5R, SC, SMT
Дополнительная информация
Dual N-channel JFET for general-purpose small signal applications. Features 20V drain-source voltage (Vdss) and 180mA continuous drain current (ID). Offers 5 Ohm maximum drain-source on-resistance (Rds On Max) and 25ns fall time. Packaged in a 6-pin SC-89 surface-mount package, this component is halogen-free and RoHS compliant. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Nominal Vgs | 1.2V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 180mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 10R |
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