SI1050X-T1-GE3
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Краткое описание:
N-CH MOSFET 8V 1.34A 86mR SC-89-6 SM
Дополнительная информация
N-channel MOSFET, 8V Vdss, 1.34A continuous drain current, and 86mR Rds On. Features include 5V gate-source voltage, 585pF input capacitance, and fast switching times with 6.8ns turn-on delay and 26ns turn-off delay. This surface-mount component is housed in a compact SC package with dimensions of 1.7mm (L) x 1.2mm (W) x 0.6mm (H). Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 236mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Packaging | Tape and Reel |
| Rds On Max | 86mR |
| Nominal Vgs | 5V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 585pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 6.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 86mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 1.34A |
| Drain to Source Voltage (Vdss) | 8V |
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