SI1065X-T1-GE3
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Краткое описание:
P-Channel JFET, 12V Vdss, 1.18A ID, 156mR Rds(on), Surface Mount
Дополнительная информация
P-channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a continuous drain current of 1.18A and a drain-source voltage of 12V. Offers a maximum drain-source on-resistance of 156mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 236mW. Packaged in a compact SC-89 surface-mount package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| Polarity | P-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 156mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 480pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 204mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.18A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 156mR |
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