SI1067X-T1-E3
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Краткое описание:
P-Channel JFET, 20V, 1.06A ID, 150mR Rds(on), SMT
Дополнительная информация
P-channel, single-element silicon JFET with 20V Vdss and 1.06A continuous drain current. Features low 150mR Rds On, 22ns fall time, and 14ns turn-on delay. Operates from -55°C to 150°C with 236mW max power dissipation. Surface mountable in a compact 1.7mm x 1.2mm x 0.6mm SC-89 package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| Polarity | P-CHANNEL |
| Fall Time | 22ns |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Resistance | 0.15R |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 375pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 48ns |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 214mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.06A |
| Drain to Source Voltage (Vdss) | 20V |
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