SI1069X-T1-GE3
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Краткое описание:
P-CH JFET 20V 940mA 268mR SC Tape & Reel
Дополнительная информация
P-CHANNEL MOSFET, surface mount, featuring a 20V Drain-to-Source Voltage (Vdss) and 940mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance of 268mR, with an Rds On Max of 184mR. This component boasts fast switching speeds with a Turn-On Delay Time of 19ns and Fall Time of 31ns. Operating temperature range from -55°C to 150°C, with a Max Power Dissipation of 236mW. Packaged in Tape and Reel, this RoHS compliant device is constructed with a single channel and element.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.7mm |
| Series | TrenchFET® |
| Weight | 0.001129oz |
| Polarity | P-CHANNEL |
| Fall Time | 31ns |
| Packaging | Tape and Reel |
| Rds On Max | 184mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 308pF |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 236mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 268mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 940mA |
| Drain to Source Voltage (Vdss) | 20V |
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