SI1302DL-T1-E3
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Краткое описание:
N-CH MOSFET 30V 600mA SOT323-3 480mR RdsOn
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 600mA continuous drain current. Features low 480mΩ drain-source on-resistance at a nominal 3V gate-source voltage. Operates with a maximum gate-source voltage of 20V and a threshold voltage of 1V. Surface mountable in a compact SOT-323 package, this component offers fast switching with turn-on delay of 5ns and fall time of 7ns. Rated for a maximum power dissipation of 310mW and operating temperatures from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000219oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 480mR |
| Nominal Vgs | 3V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 280mW |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 310mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 480mR |
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