SI1303DL-T1-E3
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Краткое описание:
P-Channel JFET, 20V, 670mA, SOT-323, Surface Mount
Дополнительная информация
P-channel, small signal MOSFET for general-purpose applications. Features a continuous drain current of 670mA and a drain-source breakdown voltage of 20V. Offers a maximum drain-source on-resistance of 430mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 290mW. Packaged in a SOT-323 (SC-70) surface-mount package, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.053inch |
| Height | 0.039inch |
| Length | 0.086inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 430mR |
| Nominal Vgs | -1.4V |
| Package/Case | SOT-323 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 290mW |
| Threshold Voltage | -1.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12.5ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 290mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 560mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 670mA |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 430mR |
| Drain to Source Breakdown Voltage | 20V |
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