SI1304BDL-T1-E3
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N-Channel Si JFET, 30V, 850mA, 270mR Rds(on), SC Package
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features 30V drain-source voltage, 850mA continuous drain current, and 270mΩ drain-source on-resistance. Operates with a gate-source voltage up to 12V and a nominal threshold voltage of 1.3V. Packaged in a 3-pin SC-70 surface-mount case, this RoHS-compliant component offers fast switching with turn-on and turn-off delay times of 10ns and 5ns respectively. Maximum power dissipation is 370mW, with an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.053inch |
| Height | 0.039inch |
| Length | 0.086inch |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Nominal Vgs | 1.3V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 100pF |
| Power Dissipation | 340mW |
| Threshold Voltage | 1.3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 370mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 850mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 270mR |
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