SI1307DL-T1-E3
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Краткое описание:
P-CH MOSFET 12V 290mR SOT-323
Дополнительная информация
P-channel MOSFET with 12V drain-source voltage and 850mA continuous drain current. Features 290mΩ maximum drain-source on-resistance and 290mW power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in SOT-323-3 for surface mounting, supplied on tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.053inch |
| Height | 0.039inch |
| Length | 0.086inch |
| Series | TrenchFET® |
| Voltage | 12V |
| Polarity | P-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 290mR |
| Package/Case | SOT-323-3 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 290mW |
| Turn-On Delay Time | 7.5ns |
| Turn-Off Delay Time | 17ns |
| Max Power Dissipation | 290mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 850mA |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 290mR |
| Drain to Source Breakdown Voltage | -12V |
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