SI1308EDL-T1-GE3
Производится
Увеличить
Краткое описание:
N-Channel JFET, 30V, 1.5A, 132mR Rds(on), SOT-323
Дополнительная информация
N-Channel MOSFET, TrenchFET® series, featuring 30V Drain-to-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Surface mount SOT-323 package with 132mR maximum Drain-to-Source On Resistance (Rds On). Offers fast switching with 2ns Turn-On Delay Time and 8ns Fall Time. Operates across a wide temperature range from -55°C to 150°C, with 500mW maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Series | TrenchFET® |
| Weight | 0.004395oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 132mR |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 105pF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 132mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 132mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
