SI1315DL-T1-GE3
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P-CH MOSFET -8V, -900mA, 336mR, SOT-323
Дополнительная информация
P-channel MOSFET, 8V drain-source voltage, -900mA continuous drain current. Features 336mR maximum drain-source on-resistance and 500mR drain to source resistance. Operates with an 8V gate-source voltage, exhibiting 10ns turn-on delay and 14ns turn-off delay. Packaged in SOT-323 (SC70-3) for surface mounting, with 112pF input capacitance and 400mW maximum power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.004395oz |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 336mR |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 112pF |
| Power Dissipation | 300mW |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 400mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -900mA |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 336mR |
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