SI1330EDL-T1-E3

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SI1330EDL-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH JFET 60V 240mA 2.5R SOT-323-3 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET, TrenchFET® series, designed for surface mount applications in a SOT-323-3 package. Features a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 2.5 Ohms. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Includes fast switching characteristics with turn-on delay time of 3.8ns and fall time of 4.8ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.004395oz
Polarity N-CHANNEL
Fall Time 4.8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2.5R
Package/Case SOT-323-3
RoHS Compliant Yes
Package Quantity 1
Threshold Voltage 2V
Number of Channels 1
Turn-On Delay Time 3.8ns
Radiation Hardening No
Turn-Off Delay Time 12.8ns
Reach SVHC Compliant No
Max Power Dissipation 280mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.5R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 240mA
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 2.5R

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