SI1400DL-T1-E3
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Краткое описание:
N-CH JFET 20V 1.6A 150mR SC-70 SMT
Дополнительная информация
N-channel MOSFET, TrenchFET® series, designed for surface mount applications. Features 20V drain-source breakdown voltage and 1.6A continuous drain current. Offers a maximum drain-source on-resistance of 150mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 568mW. Packaged in a 6-pin SC-70 (SOT-363) tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Nominal Vgs | 600mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 568mW |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 568mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 150MR |
| Drain to Source Breakdown Voltage | 20V |
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