SI1401EDH-T1-GE3
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P-Channel MOSFET, -12V, 4A, 34mR, SOT-363
Дополнительная информация
Single P-Channel MOSFET, SOT-363 (SC-70) package, featuring a -12V Drain-Source Voltage (Vdss) and a low 34mΩ Drain-Source On-Resistance (Rds On Max). This surface mount device offers a continuous drain current of 4A and a maximum power dissipation of 2.8W. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and utilizes TrenchFET® technology.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.6W |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 34MR |
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