SI1403BDL-T1-E3
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P-Channel JFET, 20V, 1.4A, 150mR Rds(on), SOT-363
Дополнительная информация
P-channel, small-signal MOSFET transistor designed for general-purpose applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 1.4A. Offers a low drain-source on-resistance (Rds On) of 150mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 568mW. Packaged in a compact SOT-363-6 (SC-70) surface-mount case, this RoHS-compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 568mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Max Power Dissipation | 568mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 150mR |
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