SI1403CDL-T1-GE3

Снят с производства
SI1403CDL-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH JFET, 20V, 2.1A, SOT-363, Small Signal
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel, small-signal MOSFET with a 20V drain-source voltage and 2.1A continuous drain current. Features low 140mΩ Rds On, 18ns fall time, and 18ns turn-on delay. Operates from -55°C to 150°C with 900mW power dissipation. Packaged in a 6-pin SOT-363 (SC-70) surface-mount package, this RoHS and halogen-free component is ideal for general-purpose switching applications.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Series TrenchFET®
Weight 0.000265oz
Polarity P-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 140mR
Package/Case SOT-363-6
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 281pF
Threshold Voltage 600mV
Number of Channels 1
Turn-On Delay Time 18ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 900mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 222mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.1A
Drain to Source Voltage (Vdss) 20V

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