SI1411DH-T1-E3
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P-CH MOSFET, -150V, 420mA, 2.6 Ohm, SOT-363
Дополнительная информация
P-Channel MOSFET with -150V Drain-Source Voltage and 420mA Continuous Drain Current. Features low 2.6 Ohm maximum Drain-Source On-Resistance and fast switching times, including 4.5ns Turn-On Delay and 11ns Fall Time. Designed for surface mount applications in a compact SOT-363 package, this component operates from -55°C to 150°C with a maximum power dissipation of 1W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.6R |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -4.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 420mA |
| Drain to Source Voltage (Vdss) | -150V |
| Drain-source On Resistance-Max | 2.6R |
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