SI1416EDH-T1-GE3
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Краткое описание:
N-Channel Si JFET, 30V, 3.9A, 58mR Rds(on), SOT-363
Дополнительная информация
N-channel JFET for general-purpose small signal applications. Features 30V drain-source voltage and 3.9A continuous drain current. Offers low 58mΩ drain-to-source resistance. Operates across a -55°C to 150°C temperature range. Packaged in a compact SOT-363 (SC-70) surface-mount case. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 58mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
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