SI1442DH-T1-GE3
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Краткое описание:
N-CH MOSFET 12V 4A SOT-363 30mR RdsOn
Дополнительная информация
N-channel MOSFET, SOT-363 package, featuring 12V drain-source voltage and 4A continuous drain current. Offers low 30mΩ drain-to-source resistance at a nominal 400mV gate-source voltage. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 2.8W. Includes 1.01nF input capacitance and 8ns turn-on delay. Surface mountable, RoHS compliant, and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | 400mV |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.01nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 12V |
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