SI1469DH-T1-E3
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Краткое описание:
P-CH MOSFET 20V 3.2A 80mR SOT-363 SC-70
Дополнительная информация
P-channel MOSFET transistor, surface mount, 20V drain-source voltage, 3.2A continuous drain current, and 80mΩ maximum drain-source on-resistance. Features include a 155mΩ drain-to-source resistance, 5ns turn-on delay, 9ns fall time, and 22ns turn-off delay. Operates with a 12V gate-to-source voltage and a -1.5V threshold voltage. Packaged in a 6-pin SOT-363-6 (SC-70) in tape and reel, this RoHS compliant component offers a maximum power dissipation of 2.78W and an operating temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 470pF |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 80mR |
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