SI1469DH-T1-GE3
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Краткое описание:
P-CHANNEL MOSFET, 20V, 3.2A, 1.5W, SOT-363-6
Дополнительная информация
The SI1469DH-T1-GE3 is a P-channel MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.2A and a maximum power dissipation of 2.78W. The device is packaged in a SOT-363-6 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 470pF |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 2.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 155mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 20V |
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