SI1471DH-T1-E3

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SI1471DH-T1-E3 - Vishay
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Краткое описание: N-Ch MOSFET, 30V, 100mR, 2.8A, SOT-363, TrenchFET
Производитель Vishay
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Single N-channel TrenchFET power MOSFET in a SC-70-6 (SOT-363-6) surface mount package. Features 30V drain-source voltage, 100mΩ maximum drain-source on-resistance, and 2.8A continuous drain current. Offers fast switching with 4ns turn-on delay and 9ns fall time. Operating temperature range from -55°C to 150°C with 2.78W maximum power dissipation. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000265oz
Polarity P-CHANNEL
Fall Time 9ns
Packaging Tape and Reel
Rds On Max 100mR
Package/Case SOT-363-6
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 445pF
Threshold Voltage -1.6V
Number of Channels 1
Turn-On Delay Time 4ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2.78W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 175mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.8A
Drain to Source Voltage (Vdss) -30V
Drain-source On Resistance-Max 100MR

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