SI1539DL-T1-E3
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Краткое описание:
2-Ch N/P-Ch JFET, 30V, 630mA, SC-70, Surface Mount
Дополнительная информация
Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a 30V drain-source voltage, 630mA continuous drain current, and a low 480mΩ drain-source on-resistance. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 270mW. Packaged in a compact SC-70, 6-pin surface-mount configuration, this RoHS-compliant component offers fast switching speeds with turn-on delay times as low as 4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 480mR |
| Nominal Vgs | 1V |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 270mW |
| Threshold Voltage | 2.6V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 270mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 940MR |
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