SI1553CDL-T1-GE3
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Краткое описание:
2-Ch N/P-Ch Si JFET, 20V, 500mA, 850mR, SOT-23
Дополнительная информация
Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 500mA. Offers a low drain-source on-resistance of 390mΩ (max) and a gate-source voltage rating of 12V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 340mW. Packaged in a 6-pin SC-70 surface-mount format, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 38pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 340mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 850mR |
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