SI1900DL-T1-E3

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SI1900DL-T1-E3 - Vishay(Siliconix)
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Краткое описание: 2-Ch N-Ch JFET, 30V, 590mA, 480mR, SOT-363
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

Surface mount N-channel JFET with 30V drain-source voltage and 590mA continuous drain current. Features 2 channels, 480mΩ maximum drain-source on-resistance, and 5ns turn-on delay. Operates from -55°C to 150°C with 270mW power dissipation. Packaged in SOT-363-6 (SC-70) for tape and reel delivery.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000265oz
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 480mR
Package/Case SOT-363-6
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 270mW
Number of Channels 2
Number of Elements 2
Turn-On Delay Time 5ns
Turn-Off Delay Time 8ns
Max Power Dissipation 270mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 480mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 590mA
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 480mR

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