SI1902DL-T1-E3
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2-Ch N-Ch JFET, 20V, 660mA, 385mR, SC-70, Surface Mount
Дополнительная информация
Dual N-channel JFET for general-purpose small signal applications. Features 20V drain-source voltage, 660mA continuous drain current, and 385mΩ drain-source on-resistance. Operates with a gate-source voltage up to 12V and a nominal Vgs of 600mV. Includes 10ns turn-on and turn-off delay times, with a 16ns fall time. Surface mountable in a 6-pin SC package, this RoHS compliant component offers a maximum power dissipation of 270mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 385mR |
| Nominal Vgs | 600mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 270mW |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 270mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 385mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 385MR |
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