SI1965DH-T1-E3
Дополнительная информация
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | P-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 120pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 390mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.14A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 390MR |
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