SI1965DH-T1-E3

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SI1965DH-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 12V, 1.14A, 390mR, 2-Ch, SC70-6
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Dual P-channel MOSFET, 12V Vdss, 1.14A continuous drain current, and 390mR max Rds(on). Features include 12ns turn-on delay, 15ns turn-off delay, and 27ns fall time. This surface-mount component operates from -55°C to 150°C with 1.25W max power dissipation. Packaged in SC70-6, it is lead-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 390mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 120pF
Number of Channels 2
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Max Power Dissipation 1.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 390mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 1.14A
Drain to Source Voltage (Vdss) 12V
Drain-source On Resistance-Max 390MR

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