SI1967DH-T1-E3

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SI1967DH-T1-E3 - Vishay(Siliconix)
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Краткое описание: 2P-CH MOSFET 20V 1.3A 490mR SC70-6 Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET featuring 20V drain-source voltage and 1.3A continuous drain current. Offers low 490mΩ drain-source resistance and fast switching speeds with 12ns turn-on and 15ns turn-off delay times. Designed for surface mount applications in a compact SC70-6 package, operating from -55°C to 150°C with 1.25W maximum power dissipation.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series TrenchFET®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 27ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 490mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 110pF
Number of Channels 2
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Max Power Dissipation 1.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 490mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 1.3A
Drain to Source Voltage (Vdss) 20V

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