SI1967DH-T1-GE3
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Краткое описание:
P-CH MOSFET 20V 1.3A 490mR SOT-363
Дополнительная информация
P-channel MOSFET, 20V drain-source voltage, 1.3A continuous drain current. Features 490mΩ maximum drain-source on-resistance at 8V gate-source voltage. Surface mount SOT-363 package with 110pF input capacitance. Operates from -55°C to 150°C with 1.25W maximum power dissipation. RoHS compliant with fast switching times, including 12ns turn-on and 15ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 490mR |
| Package/Case | SOT-363 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 110pF |
| Power Dissipation | 740mW |
| Threshold Voltage | -400mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 490mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 490MR |
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