SI2301CDS-T1-E3
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Краткое описание:
P-Channel MOSFET, 20V, 3.1A, SOT-23, Small Signal
Дополнительная информация
P-channel, small-signal MOSFET for general-purpose applications. Features a -20V drain-to-source voltage and 3.1A continuous drain current. Offers low on-resistance of 112mΩ and fast switching speeds with turn-on delay of 11ns and fall time of 35ns. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 112mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 405pF |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 112mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | -20V |
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