SI2301CDS-T1-GE3
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P-CH MOSFET, 20V, 2.3A, 112mR, SOT-23, Small Signal
Дополнительная информация
P-channel MOSFET, TO-236 package, designed for general-purpose small signal applications. Features a continuous drain current of 2.3A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 112mR at a gate-source voltage of -4.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. This surface-mount component is supplied in tape and reel packaging and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 112mR |
| Nominal Vgs | -400mV |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 405pF |
| Power Dissipation | 860mW |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 112mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 112mR |
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