SI2302ADS-T1
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Краткое описание:
N-Channel MOSFET, 20V, 2.1A, 60mR, SOT-23-3
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a continuous drain current of 2.1A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source resistance (Rds On Max) of 60mR. This surface mount device is housed in a SOT-23-3 package, measuring 3.04mm in length, 1.4mm in width, and 1.02mm in height. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 900mW.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Input Capacitance | 300pF |
| Power Dissipation | 900mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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