SI2302ADS-T1-E3
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N-Channel MOSFET, 20V, 2.1A, 60mR, TO-236, SMT
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, TO-236 package, offering 20V Drain to Source Breakdown Voltage and 2.1A Continuous Drain Current. Features 60mΩ Drain to Source Resistance at a nominal Vgs of 950mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 700mW. This surface mount device includes a 1-element, 1-channel configuration with fast switching times, including a 7ns turn-on delay and 16ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 950mV |
| Termination | SMD/SMT |
| Output Power | 700mW |
| Package/Case | TO-236-3 |
| Polarization | N |
| Package Quantity | 3000 |
| Input Capacitance | 300pF |
| Power Dissipation | 700mW |
| Threshold Voltage | 950mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 20V |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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