SI2302CDS-T1-E3
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Краткое описание:
N-Channel MOSFET, 20V, 2.6A, 57mR Rds On, SOT-23
Дополнительная информация
N-channel MOSFET, designed for general-purpose small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 2.6A. Offers a low drain-source on-resistance (Rds On) of 57mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 710mW. Packaged in a compact SOT-23-3 surface-mount case, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 57mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 112pF |
| Power Dissipation | 710mW |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 710mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 57mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 57mR |
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