SI2302DDS-T1-GE3
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Краткое описание:
N-Channel MOSFET, 20V, 2.9A, 57mR RdsOn, SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mount applications in a SOT-23-3 package. Features a continuous drain current of 2.9A and a drain-to-source voltage of 20V. Offers a low on-resistance of 57mR at a gate-to-source voltage of 8V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 710mW. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 7ns. This component is RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 57mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 710mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 710mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 57mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
