SI2303BDS-T1
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P-Channel MOSFET, 30V, 1.49A, 200mR, SOT-23
Дополнительная информация
P-Channel Silicon MOSFET, designed for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (ID) of 1.49A. Offers a low Drain-to-Source On-Resistance (Rds On Max) of 200mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. Packaged in a SOT-23-3 surface mount configuration, ideal for compact designs.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | No |
| Package Quantity | 3000 |
| Input Capacitance | 180pF |
| Power Dissipation | 900mW |
| Number of Channels | 1 |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 10ns |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.49A |
| Drain to Source Voltage (Vdss) | 30V |
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