SI2303BDS-T1-GE3
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Краткое описание:
P-CH MOSFET, 30V, 1.3A, 200mR, SOT-23-3, Surface Mount
Дополнительная информация
P-channel MOSFET, designed for general-purpose small signal applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 1.3A. Offers a low on-resistance of 200mΩ at a nominal gate-to-source voltage of -3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 700mW. Packaged in a SOT-23-3 surface-mount configuration, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | -3V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 180pF |
| Power Dissipation | 700mW |
| Threshold Voltage | -3V |
| Turn-On Delay Time | 55ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain to Source Breakdown Voltage | 30V |
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