SI2303CDS-T1-E3
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Краткое описание:
P-CH MOSFET, 30V, 1.9A, 190mR, SOT-23-3
Дополнительная информация
P-channel, small-signal MOSFET in a SOT-23-3 package. Features a continuous drain current of 1.9A, drain-source voltage of 30V, and a maximum drain-source on-resistance of 190mR. Operates with a gate-to-source voltage up to 20V and offers a maximum power dissipation of 2.3W. This surface-mount device boasts a fall time of 37ns and turn-off delay of 12ns, with input capacitance at 155pF. RoHS compliant and suitable for general-purpose applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 37ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 155pF |
| Power Dissipation | 2.3W |
| Number of Channels | 1 |
| Turn-On Delay Time | 36ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 2.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 190MR |
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