SI2303CDS-T1-GE3
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P-CH MOSFET, 30V, 1.9A, 190mR, SOT-23-3
Дополнительная информация
P-channel MOSFET, TO-236AB package, offering a continuous drain current of 1.9A and a drain-source breakdown voltage of -30V. Features a low drain-source on-resistance of 190mR at a nominal gate-source voltage of -3V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.3W. This surface-mount component boasts fast switching times, with turn-on delay at 36ns and fall time at 37ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 37ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Nominal Vgs | -3V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 155pF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 36ns |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 190mR |
| Drain to Source Breakdown Voltage | -30V |
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