SI2304BDS-T1-GE3
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N-Channel MOSFET, 30V, 2.6A, 70mR Rds(on), SOT-23
Дополнительная информация
N-channel MOSFET, TO-236AA package, offering 30V drain-source voltage and 2.6A continuous drain current. Features low 70mΩ drain-source on-resistance, 3V threshold voltage, and fast switching times with 7.5ns turn-on and 19ns turn-off delay. Operates from -55°C to 150°C with 750mW power dissipation, suitable for general-purpose small-signal applications. Surface mount design, RoHS compliant, and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 12.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 70mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 225pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 70mR |
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