SI2306BDS-T1-GE3
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N-CH MOSFET, 30V, 3.16A, 47mR, SOT-23-3, SM
Дополнительная информация
N-channel MOSFET, surface mount, TO-236 (SOT-23-3) package. Features 30V drain-source breakdown voltage, 3.16A continuous drain current, and 47mΩ maximum drain-source on-resistance. Operates with a 3V threshold voltage and 12ns fall time. Maximum power dissipation is 750mW, with operating temperatures from -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 47mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 305pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 47mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.16A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 47MR |
| Drain to Source Breakdown Voltage | 30V |
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